PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics

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PHB101NQ03LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD101NQ03LT

TrenchMOS™ logic level FET

80

IS

(A)

60

VGS = 0 V

40

20

175 °C

03ai25

Tj = 25 °C

10

VGS

(V)

8

ID = 50 A

Tj = 25 °C

VDD = 15 V

6

4

2

03ai27

0

0

0.3

0.6

0.9 VSD (V) 1.2

0

0

10

20

30

40

50

QG (nC)

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 50 A; VDD = 15 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 10929

Product data

Rev. 02 — 25 February 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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