PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics
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PHB101NQ03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 ≤ Tj ≤ 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 10 V; ID = 25 A
Tj = 25 °C; VGS = 5 V; ID = 25 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 ≤ Tj ≤ 175 °C
25 ≤ Tj ≤ 175 °C; RGS = 20 kΩ
tp ≤ 50 µs; pulsed;
duty cycle 25%; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 43 A;
tp = 0.19 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
Typ
Max Unit
-
30
V
-
75
A
-
166
W
-
175
°C
4.5
5.5
mΩ
5.8
7.0
mΩ
Min
Max Unit
-
30
V
-
30
V
-
±20
V
-
±25
V
-
75
A
-
75
A
-
240
A
-
166
W
−55
+175 °C
−55
+175 °C
-
75
A
-
240
A
-
185
mJ
9397 750 10929
Product data
Rev. 02 — 25 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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