PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics

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PHB101NQ03LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD101NQ03LT

TrenchMOS™ logic level FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Rth(j-mb)

Rth(j-a)

thermal resistance from junction to mounting base Figure 4

thermal resistance from junction to ambient

SOT428

mounted on a PCB;

SOT428 minimum footprint;

vertical in still air

SOT404 and SOT428

mounted on a PCB;

SOT404 minimum footprint;

vertical in still air

7.1 Transient thermal impedance

Min Typ Max Unit

- - 0.9 K/W

- 75 - K/W

- 50 - K/W

10

Zth(j-mb)

(K/W)

1

δ = 0.5

0.2

10-1 0.1

0.05

0.02

10-2

single pulse

10-3

10-5

10-4

10-3

10-2

03ai20

P

δ

=

tp

T

10-1

tp

t

T

tp (s)

1

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 10929

Product data

Rev. 02 — 25 February 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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