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PHB101NQ03LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD101NQ03LT

TrenchMOS™ logic level FET

8. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 0.25 mA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

VDS = 30 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±20 V; VDS = 0 V

VGS = 5 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

VGS = 10 V; ID = 25 A; Figure 7

Tj = 25 °C

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13

VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11

VDD = 15 V; ID = 25 A; VGS = 4.5 V;

RG = 5.6 Ω; resistive load

VSD

source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12

trr

reverse recovery time

IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V

Qr

recovered charge

Min Typ Max Unit

30 -

-

V

27 -

-

V

1 1.9 2.5 V

0.6 -

-

V

-

-

2.9 V

-

0.05 1 µA

-

-

500 µA

-

10 100 nA

-

5.8 7 mΩ

-

10.5 12.6 mΩ

-

4.5 5.5 mΩ

-

23 -

nC

-

10.5 -

nC

-

8-

nC

-

2180 -

pF

-

600 -

pF

-

225 -

pF

-

23 -

ns

-

90 -

ns

-

37 -

ns

-

33 -

ns

-

0.85 1.2 V

-

37 -

ns

-

33 -

nC

9397 750 10929

Product data

Rev. 02 — 25 February 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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