PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics

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PHB101NQ03LT

TrenchMOS™ logic level FET

Philips Electronics 

PHB/PHD101NQ03LT

TrenchMOS™ logic level FET

Rev. 02 — 25 February 2003

Product data

1. Description

N-channel logic level field-effect power transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHB101NQ03LT in SOT404 (D2-PAK)

PHD101NQ03LT in SOT428 (D-PAK).

2. Features

s Low gate charge

s Low on-state resistance.

3. Applications

s Optimized as a control FET in DC to DC convertors

4. Pinning information

Table 1: Pinning - SOT404, SOT428 simplified outline and symbol

Pin Description

Simplified outline

1 gate (g)

2 drain (d)

mb

[1]

3 source (s)

mb mounting base,

connected to drain (d)

2

1

3 MBK116

mb

2

1

Top view

3

MBK091

Symbol

d

g

MBB076

s

SOT404 (D2-PAK)

SOT428 (D-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.

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