PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

PHB101NQ03LT

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHB/PHD101NQ03LT

TrenchMOS™ logic level FET

3.2

VGS(th)

(V)

2.4

1.6

0.8

max

typ

min

03ai29

10-1

ID

(A)

10-2

10-3

10-4

10-5

03ai28

min

typ

max

0

-60

0

60

120 Tj (°C) 180

10-6

0

0.8

1.6

2.4 VGS(V) 3.2

ID = 1 mA; VDS = VGS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Tj = 25 °C; VDS = 5 V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

104

03ai26

C

(pF)

103

Ciss

Coss

Crss

102

10-1

1

10 VDS (V) 102

VGS = 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 10929

Product data

Rev. 02 — 25 February 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

7 of 13

Share Link: