PHB101NQ03LT Просмотр технического описания (PDF) - Philips Electronics
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PHB101NQ03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS™ logic level FET
80
ID
(A)
Tj = 25 °C
60
10 V 5 V 4.5 V
03ai22
4V
3.8 V
3.6 V
80
ID VDS > ID x RDSon
(A)
60
03ai24
40
3.4 V
40
20
0
0
3.2 V
3V
VGS = 2.8 V
0.2
0.4
0.6
0.8
1
VDS (V)
20
175 °C
Tj = 25 °C
0
0
1
2
3 VGS (V) 4
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ai23
16
2
RDSon Tj = 25 °C
VGS = 3.8 V
a
(mΩ)
12
1.5
4V
8
4.5 V
1
5V
10 V
4
0.5
03af18
0
0
20
40
60 ID (A) 80
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10929
Product data
Rev. 02 — 25 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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