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MGFK25V4045(2003) Даташит - MITSUBISHI ELECTRIC

MGFK25V4045 image

Номер в каталоге
MGFK25V4045

Компоненты Описание

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page
3 Pages

File Size
325.8 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
• Internally impedance matched
• Flip-chip mounted
• High output power
   P1dB = 0.3W (TYP.) @f=14.0-14.5GHz
• High linear power gain
   GLP = 9.0dB (TYP.) @f=14.0-14.5GHz
• High power added efficiency
   P.A.E. = 25% (TYP.) @f=14.0-14.5GHz


APPLICATION
• For use 14.0–14.5GHz band power amplifiers

Page Link's: 1  2  3 

Номер в каталоге
Компоненты Описание
PDF
производитель
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14.0-14.5GHz, 4W Internally Matched Power FET
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14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
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C band internally matched power GaAs FET
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