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MGFK30V4045(2005) Даташит - MITSUBISHI ELECTRIC

MGFK30V4045 image

Номер в каталоге
MGFK30V4045

Компоненты Описание

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  2011   lastest PDF  

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page
3 Pages

File Size
244.4 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
• Internally impedance matched
• Flip-chip mounted
• High output power
   P1dB = 1.1W(TYP.) @f=14.0-14.5GHz
• High linear power gain
   GLP = 8.0dB(TYP.) @f=14.0-14.5GHz
• High power added efficiency
   P.A.E. = 24%(TYP.) @f=14.0-14.5GHz


APPLICATION
• For use in 14.0-14.5GHz band amplifiers

Page Link's: 1  2  3 

Номер в каталоге
Компоненты Описание
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