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MGFK39V4045 Даташит - MITSUBISHI ELECTRIC

MGFK39V4045 image

Номер в каталоге
MGFK39V4045

Компоненты Описание

Other PDF
  2011  

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page
1 Pages

File Size
18.8 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
GaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic The MGFK39V4045 is an internally impedance matched package guarantees high reliability.


FEATURES
● Internally impedance matched
● High output power
   P1dB=8W (TYP.) @f=14.0~14.5GHz
● High linear power gain
   GLP=5.5dB (TYP.) @f=14.0~14.5GHz
● High power added efficiency
   ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB


APPLICATION
   For use in 14.0~14.5GHz band amplifiers

Page Link's: 1 

Номер в каталоге
Компоненты Описание
PDF
производитель
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
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14.0~14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET 
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14.0~14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
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10.7 ~ 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET
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14.0-14.5GHz, 4W Internally Matched Power FET
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14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.

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