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MGFC38V6472 Даташит - Mitsumi

MGFC38V6472 image

Номер в каталоге
MGFC38V6472

Компоненты Описание

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106.7 kB

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DESCRIPTION
The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power
    P1dB=6W (TYP.) @f=6.4 – 7.2GHz
● High power gain
    GLP=9dB (TYP.) @f=6.4 – 7.2GHz
● High power added efficiency
    P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz
● Low distortion [ item -51]
    IM3=-45dBc (TYP.) @Po=27dBm S.C.L.


APPLICATION
● item 01 : 6.4 – 7.2 GHz band power amplifier
● item 51 : 6.4 – 7.2 GHz band digital radio communication

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Номер в каталоге
Компоненты Описание
PDF
производитель
C band internally matched power GaAs FET ( Rev : 2011 )
Mitsumi
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC

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