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MGFK30V4045 Даташит - MITSUBISHI ELECTRIC

MGFK30V4045 image

Номер в каталоге
MGFK30V4045

Компоненты Описание

Other PDF
  2005   2011  

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page
2 Pages

File Size
73.9 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
● Internally impedance matched
● Flip-chip mounted
● High output power
   P1dB = 1.1 W(TYP.) @ f = 14.0 ~ 14.5GHz
● High linear power gain
   GLP = 8.0 dB(TYP.) @ f = 14.0 ~ 14.5GHz
● High power added efficiency
   ηadd = 24%(TYP.) @ f = 14.0 ~ 14.5GHz


APPLICATION
   For use in 14.0 ~ 14.5GHz-band amplifiers

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
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14.0~14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET 
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14.0~14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
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14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
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14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
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14.0-14.5GHz, 4W Internally Matched Power FET
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14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
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C band internally matched power GaAs FET
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