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MGFK33V4045 Даташит - MITSUBISHI ELECTRIC

MGFK33V4045 image

Номер в каталоге
MGFK33V4045

Компоненты Описание

Other PDF
  2011  

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page
4 Pages

File Size
253.9 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
● Internally impedance matched
● Flip-chip mounted
● High output power
   P1dB = 2.0W (TYP.) @ f = 14.0 ~ 14.5GHz
● High linear power gain
   GLP = 7.0dB (TYP.) @ f = 14.0 ~ 14.5GHz
● High power added efficiency
   ηadd = 22% (TYP.) @ f = 14.0 ~ 14.5GHz, P1dB


APPLICATION
   For use in 14.0 ~ 14.5 GHz-band amplifiers

Page Link's: 1  2  3  4 

Номер в каталоге
Компоненты Описание
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производитель
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