BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
12
VGS
(V)
8
4
003aaf280
VDS = 14 V
VDS = 44 V
0
0
5
10
15
QG (nC)
Tj = 25 °C; ID = 7 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
40
IF
(A)
30
003aaf281
20
Tj = 150 °C
Tj = 25 °C
10
0
0
0.5
1.0
1.5
2.0
VSDS (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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