BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7880-55
(Rev.:2011)

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

BUK7880-55

N-channel TrenchMOS standard level FET

Rev. 3 — 21 April 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ AEC Q101 compliant

„ Electrostatically robust due to

integrated protection diodes

„ Low conduction losses due to low

on-state resistance

1.3 Applications

„ Automotive and general purpose

power switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VDS

drain-source voltage

ID

drain current

Ptot

total power dissipation

Static characteristics

RDSon

drain-source on-state

resistance

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

Conditions

Tj ≥ 25 °C; Tj ≤ 150 °C

Tsp = 25 °C

Tsp = 25 °C; Tamb = 25 °C

VGS = 10 V; ID = 5 A;

Tj = 25 °C

ID = 2.5 A; Vsup ≤ 25 V;

RGS = 50 Ω; VGS = 10 V;

Tj(init) = 25 °C; unclamped

Min Typ Max Unit

- - 55 V

- - 7.5 A

- - 1.8 W

- 65 80 mΩ

- - 30 mJ

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