BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base;
connected to drain
Simplified outline
4
Graphic symbol
D
123
SOT223 (SOT223)
G
S
sym116
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7880-55
SOT223
4. Limiting values
Description
plastic surface-mounted package with increased heatsink;
4 leads
Version
SOT223
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 150 °C
RGS = 20 kΩ
Tamb = 25 °C
Tsp = 25 °C
Tamb = 100 °C
Tsp = 25 °C; pulsed
Tsp = 25 °C; Tamb = 25 °C
Tsp = 25 °C
IS
source current
ISM
peak source current
Avalanche ruggedness
Tsp = 25 °C
pulsed; Tsp = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
Electrostatic discharge
ID = 2.5 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Vesd
electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 21 April 2011
Min Max Unit
-
55 V
-
55 V
-16 16 V
-
3.5 A
-
7.5 A
-
2.2 A
-
40 A
-
1.8 W
-
8.3 W
-55 150 °C
-55 150 °C
-
7.5 A
-
40 A
-
30 mJ
-
2
kV
© NXP B.V. 2011. All rights reserved.
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