BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
40
ID
(A)
VGS (V) = 16
12
10
30
20
10
4.5 4.0
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9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
0
0
2
4
6
8
10
VDS (V)
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
120
RDS(on)
(mΩ)
100
80
VGS (V) = 6.0
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6.5
7.0
8.0
9.0
10
60
0
5
10
15
20
25
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
20
ID
(A)
15
10
5
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Tj = 150 °C Tj = 25 °C
8
gfs
(S)
6
4
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0
0
2
4
6
8
VGS (V)
VDS > ID x RDSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2
0
4
8
12
16
20
ID (A)
VDS > ID x RDSon
Fig 9. Forward transconductance as a function of
drain current; typical values
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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