BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
100
Pder
(%)
80
60
40
20
0
0
003aaf268
40
80
120
160
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0
003aaf269
40
80
120
160
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
102
IDM
(A)
RDS(on) = VDS / ID
10
D.C.
1
003aaf270
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
100
WDSS
(%)
80
60
40
20
003aaf282
10−1
1
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
0
20 40 60 80 100 120 140 160
T(mb) (°C)
ID = 2.5 A
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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