BUK7880-55(2011) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
2.0
a
1.5
1.0
003aaf276
5
VGS(th)
(V)
4
3
2
maximum
typical
minimum
003aaf277
0.5
−100
0
100
200
Tmb (°C)
1
−100
0
ID = 1 mA; VDS = VGS
100
200
Tj (°C)
ID = 5 A; VGS = 10 V
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10−1
ID
(A)
10−2
003aaf278
10−3
10−4
2%
typical
98 %
10−5
10−6
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
1.0
C
(nF)
0.8
Ciss
Coss
0.6
Crss
0.4
003aaf279
0.2
0
10−2
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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