PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

Список матч

PSMN102-200Y

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

PSMN102-200Y

N-channel TrenchMOS standard level FET

50

IS

(A)

40

30

20

10

003aab745

Tj = 150 °C

25 °C

104

C

(pF)

103

102

003aab747

Ciss

Coss

Crss

0

0

0.3

0.6

0.9

1.2

VSD (V)

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 13. Source current as a function of source-drain

voltage; typical values

10

10−1

1

10

102

VDS (V)

VGS = 0 V; f = 1 MHz

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN102-200Y_1

Product data sheet

Rev. 01 — 29 April 2008

© NXP B.V. 2008. All rights reserved.

8 of 12

Share Link: