PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.

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PSMN102-200Y

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

PSMN102-200Y

N-channel TrenchMOS standard level FET

6. Characteristics

Table 5. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Static characteristics

V(BR)DSS drain-source breakdown

voltage

VGS(th) gate-source threshold voltage

IDSS

drain leakage current

IGSS

RG

RDSon

gate leakage current

gate resistance

drain-source on-state

resistance

Dynamic characteristics

QG(tot) total gate charge

QGS

gate-source charge

QGD

gate-drain charge

VGS(pl) gate-source plateau voltage

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VSD

source-drain voltage

trr

reverse recovery time

Qr

recovered charge

Conditions

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; see Figure 9 and 10

Tj = 25 °C

Tj = 150 °C

Tj = −55 °C

VDS = 160 V; VGS = 0 V

Tj = 25 °C

Tj = 150 °C

VGS = ±20 V; VDS = 0 V

f = 1 MHz

VGS = 10 V; ID = 12 A; see Figure 6 and 8

Tj = 25 °C

Tj = 150 °C

ID = 12 A; VDS = 100 V; VGS = 10 V;

see Figure 11 and 12

VGS = 0 V; VDS = 30 V; f = 1 MHz;

see Figure 14

VDS = 100 V; RL = 5.8 Ω; VGS = 10 V;

RG = 5.6 Ω

IS = 12 A; VGS = 0 V; see Figure 13

IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V

Min Typ Max Unit

200 -

-

V

178 -

-

V

2

3

4

V

1

-

-

V

-

-

4.4 V

-

-

1

µA

-

-

100 µA

-

-

100 nA

-

1.1 -

Ω

-

86 102 mΩ

-

206 245 mΩ

-

30.7 -

nC

-

6.3 -

nC

-

10.1 -

nC

-

4.6 -

V

-

1568 -

pF

-

170 -

pF

-

55 -

pF

-

14.2 -

ns

-

29.5 -

ns

-

33 -

ns

-

28 -

ns

-

0.9 1.2 V

-

143 -

ns

-

268 -

nC

PSMN102-200Y_1

Product data sheet

Rev. 01 — 29 April 2008

© NXP B.V. 2008. All rights reserved.

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