PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PSMN102-200Y Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
PSMN102-200Y
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4
[1] Mounted on a printed-circuit board; vertical in still air.
Min Typ Max Unit
[1] -
-
1.1 K/W
10
Zth(j-mb)
(K/W)
1
d = 0.5
10−1
0.2
0.1
0.05
0.02
10−2
single shot
10−3
10−6
10−5
10−4
10−3
10−2
003aac268
P
tp
δ=
T
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN102-200Y_1
Product data sheet
Rev. 01 — 29 April 2008
© NXP B.V. 2008. All rights reserved.
4 of 12
Share Link: 