PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PSMN102-200Y Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
PSMN102-200Y
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
003aab852
max
typ
min
10−1
ID
(A)
10−2
10−3
10−4
10−5
003aac062
min typ max
0
−60
0
60
120
160
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10−6
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
ID = 12 A
Tj = 25 °C
8
40
100
6
4
003aab746
VDS = 160 V
2
0
0
10
20
30
40
QG (nC)
ID = 12 A; VDS = 40, 100 and 160 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Gate charge waveform definitions
PSMN102-200Y_1
Product data sheet
Rev. 01 — 29 April 2008
© NXP B.V. 2008. All rights reserved.
7 of 12
Share Link: 