PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PSMN102-200Y Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
PSMN102-200Y
N-channel TrenchMOS standard level FET
40
ID
(A)
30
003aab742
VGS (V) = 10
6
20
10
0
0
5
4.8
4.6
4.4
4.2
1.25
2.5
3.75
5
VDS (V)
200
4.5
5
RDSon
(mΩ)
160
120
003aab743
VGS (V) = 6
10
80
0
10
20
30
40
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
50
ID
(A)
VDS > ID × RDSon
40
003aab744
30
Tj = 150 °C
25 °C
20
10
3
a
2
1
03al52
0
0
2
4
6
8
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−60
0
60
120
180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN102-200Y_1
Product data sheet
Rev. 01 — 29 April 2008
© NXP B.V. 2008. All rights reserved.
6 of 12
Share Link: 