PSMN102-200Y Просмотр технического описания (PDF) - NXP Semiconductors.

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PSMN102-200Y

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

PSMN102-200Y

N-channel TrenchMOS standard level FET

Rev. 01 — 29 April 2008

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

I Low body Qr

1.3 Applications

I Industrial DC motor control

I DC-to-DC converters

I Fast switching

I Class D audio

I Switched-mode power supplies

1.4 Quick reference data

I VDS ≤ 200 V

I RDSon ≤ 102 mΩ

I ID ≤ 21.5 A

I QGD = 10.1 nC (typ)

2. Pinning information

Table 1.

Pin

1, 2, 3

4

mb

Pinning

Description

source (S)

gate (G)

mounting base; connected to drain

(D)

Simplified outline

mb

1234

SOT669 (LFPAK)

Symbol

D

G

mbb076 S

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