LH52D1000 Просмотр технического описания (PDF) - Sharp Electronics

Номер в каталоге

Компоненты Описание

Список матч

LH52D1000

CMOS 1M (128K × 8) Static Ram

Sharp Electronics 

CMOS 1M (128K × 8) Static RAM

LH52D1000

DATA RETENTION CHARACTERISTICS (TA = -40°C to +85°C)

PARAMETER

SYMBOL

CONDITIONS

MIN. TYP MAX. UNIT NOTE

Data retention

supply voltage

VCCDR

CE2 ≤ 0.2 V or

CE1 ≥ VCCDR – 0.2 V

2.0

 3.6

V

1

Data retention

supply current

ICCDR

VCCDR = 3.0 V

TA = 25°C 

 1.0

CE2 ≤ 0.2 V or

µA

1

CE1 ≥ VCCDR – 0.2 V

TA = 40°C 



3.0

35

Chip enable

setup time

tCDR



0



 ms



Chip enable

hold time

tR



NOTE:

1. CE2 ≥ VCCDR – 0.2 V or CE2 ≤ 0.2 V

2. Typical values at TA = 25°C

5



 ms



PIN CAPACITANCE (TA = 25°C, f = 1 MHz)

PARAMETER

SYMBOL CONDITIONS MIN.

TYP.

MAX.

UNIT NOTE

Input capacitance

CIN

VIN = 0 V





10

pF

1

I/O capacitance

CI/O

VI/O = 0 V





10

pF

1

NOTE:

1. This parameter is sampled and not production tested.

5

Share Link: