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LH52D1000

CMOS 1M (128K × 8) Static Ram

Sharp Electronics 

LH52D1000

CMOS 1M (128K × 8) Static Ram

FEATURES

• Access time: 85 ns (MAX.),

100 ns (MAX.)

• Current consumption:

Operating: 40 mA (MAX.)

6 mA (MAX.) (tRC, tWC = 1 µs)

Standby: 45 µA (MAX.)

• Data Retention:

1.0 µA (MAX. VCCDR = 3 V, tA = 25°C)

• Single power supply: 2.7 V to 3.6 V

• Operating temperature: -40°C to +85°C

• Fully-static operation

• Three-state output

• Not designed or rated as radiation

hardened

• Packages:

32-pin 8 × 20 mm2 TSOP

32-pin 8 × 13.4 mm2 STSOP

• N-type bulk silicon

DESCRIPTION

The LH52D1000 is a static RAM organized as

131,072 × 8 bits which provides low-power standby

mode. It is fabricated using silicon-gate CMOS process

technology.

PIN CONNECTIONS

32-PIN TSOP

32-PIN STSOP

A11 1

A9 2

A8 3

A13 4

WE 5

CE2 6

A15 7

VCC 8

NC 9

A16 10

A14 11

A12 12

A7 13

A6 14

A5 15

A4 16

TOP VIEW

32 OE

31 A10

30 CE1

29 I/O8

28 I/O7

27 I/O6

26 I/O5

25 I/O4

24 GND

23 I/O3

22 I/O2

21 I/O1

20 A0

19 A1

18 A2

17 A3

52D1000S-1

Figure 1. Pin Connections for TSOP

and STSOP Packages

1

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