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LH52D1000

CMOS 1M (128K × 8) Static Ram

Sharp Electronics 

CMOS 1M (128K × 8) Static RAM

LH52D1000

TRUTH TABLE

CE1

CE2

WE

H







L



L

H

L

L

H

H

L

H

H

NOTE:

1.  = Don’t care

L = Low

H = High

OE

MODE

I/O1 – I/O8

SUPPLY CURRENT

NOTE





Standby

High

impedance

Standby (ISB)

1



Write

Data input

Active (ICC)

1

L

Read

Data output

Active (ICC)



H

Output disable

High

impedance

Active (ICC)



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

Supply voltage

Input voltage

Operating temperature

Storage temperature

VCC

VIN

TOPR

TSTG

-0.3 to +4.6

- 0.3 to VCC + 0.3

-40 to +85

-55 to +150

NOTE:

1. The maximum applicable voltage on any pin with respect to GND.

2. Undershoot of -3.0 V is allowed width of pulse below 50 ns.

UNIT

V

V

°C

°C

NOTE

1

1, 2





RECOMMENDED DC OPERATING CONDITIONS (TA = -40°C to +85°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

NOTE

Supply voltage

VCC

2.7

3.0

3.6

V



Input voltage

VIH

2.0



VCC + 0.3

V



VIL

–0.3



0.6

V

1

NOTE:

1. Undershoot of –3.0 V is allowed width of pulse below 50 ns.

DC ELECTRICAL CHARACTERISTICS (TA = -25°C to +85°C, VCC = 2.7 V to 3.6 V)

PARAMETER SYMBOL

CONDITIONS

MIN.

TYP. MAX.

Input

leakage

ILI

current

VIN = 0 to VCC

–1.0

 1.0

Output

leakage

current

Operating

supply

current

Standby

current

Output

voltage

CE1 = VIH or CE2 = VIL or

ILO

OE = VIH or WE = VIL

–1.0

 1.0

VI/O = 0 V to VCC

ICC

VIN = VIL or VIH, CE1 = VIL, WE = VIH

CE2 = VIH, II/O = 0 mA

tCYCLE = Min



 40

ICC1

CE1 = 0.2 V, VIN = 0.2 V or VCC - 0.2 V

CE2, WE = VCC - 0.2 V, II/O = 0 mA

tCYCLE = 1.0 µs





6

ISB

CE1 = VCC – 0.2 V or

CE2 = 0.2 V



 45

ISB1

CE1 = VIH or CE2 = VIL



 2.0

VOL

IOL = 2.1 mA



 0.4

VOH

IOH = –0.5 mA

VCC - 0.5 



UNIT

µA

µA

mA

µA

mA

V

V

3

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