Renesas Electronics H7P0601DL Даташит, H7P0601DL PDF, даташитов

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H7P0601DL Даташит - Renesas Electronics

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H7P0601DL

Компоненты Описание

Silicon P-Channel MOS FET High Speed Power Switching

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page

11 Pages

File Size

84.2 kB

производитель

Renesas Electronics

Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source

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Номер в каталоге

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