H7P0601DL Просмотр технического описания (PDF) - Renesas Electronics

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H7P0601DL

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7P0601DL, H7P0601DS

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 40 mΩ typ.

• Low drive current

• 4.5 V gate drive device can driven from 5 V source

Outline

REJ03G0044-0100Z

Rev.1.00

Aug.05.2003

D

G

S

DPAK-2

4

DPAK-S

4

12 3

12 3

H7P0601DS

H7P0601DL

1. Gate

2. Drain

3. Source

4. Drain

Rev.1.00, Aug.05.2003, page 1 of 10

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