Hitachi -> Renesas Electronics 2SJ496 Даташит, 2SJ496 PDF, даташитов

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2SJ496 Даташит - Hitachi -> Renesas Electronics

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2SJ496

Компоненты Описание

Silicon P-Channel MOS FET High Speed Power Switching

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10 Pages

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46 kB

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Hitachi -> Renesas Electronics

Features
• Low on-resistance
RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = –5 A

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