H7P0601DL Просмотр технического описания (PDF) - Renesas Electronics

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H7P0601DL

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7P0601DL, H7P0601DS

Main Characteristics

Power vs. Temperature Derating

50

40

30

20

10

0 25 50 75 100 125 150

Case Temperature Tc (°C)

Maximum Safe Operation Area

−100

−30

−10

−3

−1

−0.3

(TcD=C 2OP5Wp°eC=r)1a0tiom1n1s0(0m1s1µsh0sotµ) s

Operation in this area

is limited by RDS(on)

−0.1

−0.03

Ta = 25°C

−0.01

−0.1 −0.3 −1 −3 −10 −30 −100

Drain to Source Voltage VDS (V)

Typical Output Characteristics

−50

−10 V

Pulse Test

−8 V

−40

−6 V

−5 V

−30

−20

−4 V

−10

V GS = −2 V

−3 V

0

−2 −4 −6 −8 −10

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

−50

V DS = -10 V

Pulse Test

−40

75°C

25°C

Tc = -75°C

−30

−20

−10

0

−2

−4

−6

−8

Gate to Source Voltage VGS (V)

Rev.1.00, Aug.05.2003, page 4 of 10

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