General Description
The ACT-D1M96S device is a high-speed 96Mbit synchronous dynamic random access memory (SDRAM) organized as 2 independent 512K X 48 X 2 banks. All inputs and outputs of the ACT-D1M96S are compatible with the LVTTL interface. All inputs and outputs are synchronized with the CLK input to simplify system design and enhance use with high-speed microprocessors and caches.

FEATUREs
■ 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM
■ User Configureable as "2" Independent 512K X 48 X 2 Banks
■ High-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface
■ 3.3-V Power Supply (±10% Tolerance)
■ Separate Logic and Output Driver Power Pins
■ Two Banks for On-Chip Interleaving (Gapless Accesses)
■ Up to 50-MHz Data Rates
■ CAS Latency (CL) Programmable to 2 Cycles From Column-Address Entry
■ Burst Length Programmable to 4 or 8
■ Pipeline Architecture
■ Cycle-by-Cycle DQ-Bus Write Mask Capability With Upper and Lower Byte Control
■ Chip Select and Clock Enable for Enhanced-System Interfacing
■ Serial Burst Sequence
■ Auto-Refresh
■ 4K Refresh (Total for Both Banks)
■ 200-lead CQFP, cavity-up package