T40HFL_16 Просмотр технического описания (PDF) - Vishay Semiconductors
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T40HFL_16 Datasheet PDF : 16 Pages
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www.vishay.com
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
Vishay Semiconductors
35
IFM = 300A
200A
30
100A
50A
25
20
15
T85HFL..S05
TJ= 125°C
10
10 20 30 40 50 60 70 80 90 100
Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs)
Fig. 33 - Recovery Current Characteristics
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
T85HFL..S10
1.1 TJ = 125°C
1
10
IFM = 300A
200A
100A
50A
100
Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 34 - Recovery Time Characteristics
1E4
1E3
55
IFM = 300A
50
45
200A
40
100A
35
30
50A
25
20
T85HFL..S10
15
TJ= 125°C
10
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
Fig. 35 - Recovery Charge Characteristics
60
IFM = 300A
55
200A
50
100A
45
40
50A
35
30
25
T85HFL..S10
20
TJ= 125°C
15
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs)
Fig. 36 - Recovery Current Characteristics
T40HFL.. Series
Trapezoidal Pulse
tp
TC = 70 °C
1E2
20000 10000 5000 2500 1500 1000 400 200
50 Hz
tp
1E1
1E1
T40HFL.. Series
Sinusoidal Pulse
TC= 70°C
1E2
1E3
Pulse Basewidth (µs)
1E14E41E11E1
5000 2500 1500 1000 400 200 50 Hz
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 37 - Frequency Characteristics
Revision: 20-Dec-16
9
Document Number: 93184
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