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T40HFL_16 Просмотр технического описания (PDF) - Vishay Semiconductors

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T40HFL_16 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
www.vishay.com
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
Vishay Semiconductors
45
I FM= 300A
200A
40
100A
35
50A
30
25
20
T40HFL..S10
15
T70HFL..S10
TJ = 125 °C
10
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
Fig. 27 - Recovery Current Characteristics
28
26
IFM = 300A
200A
24
100A
50A
22
20
18
16
14
12
10
T85HFL..S02
8
TJ= 125°C
6
10 20 30 40 50 60 70 80 90 100
Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)
Fig. 30 - Recovery Current Characteristics
1.2
1.1
1
0.9
0.8
0.7 T85HFL..S02
TJ= 125°C
IFM = 300A
200A
100A
50A
0.6
10
100
Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs)
Fig. 28 - Recovery Time Characteristics
25
IFM = 300A
20
200A
100A
15
50A
10
T85HFL..S02
TJ = 125 °C
5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 29 - Recovery Charge Characteristics
1.3
1.2
IFM = 300A
1.1
200A
1
100A
0.9
T85HFL..S05
TJ= 125°C
0.8
10
50A
100
Ra te Of Fall Of Forward Current - di/ d t (A/ µs)
Fig. 31 - Recovery Time Characteristics
30
IFM = 300A
27
200A
24
100A
21
18
50A
15
12
9
T85HFL..S05
TJ = 125°C
6
10 20 30 40 50 60 70 80 90 100
Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)
Fig. 32 - Recovery Charge Characteristics
Revision: 20-Dec-16
8
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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