T40HFL_16 Просмотр технического описания (PDF) - Vishay Semiconductors
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T40HFL_16 Datasheet PDF : 16 Pages
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VS-T40HFL, VS-T70HFL, VS-T85HFL Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
VS_T40HFL..
40
VS_T70HFL..
VS_T85HFL..
60
80
100
trr
CODE
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S05, S10
S05, S10
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
150
300
500
700
900
1100
IRRM MAXIMUM
AT TJ = 25 °C
μA
100
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward
slope resistance
I2t
VF(TO)1
VF(TO)2
rf1
rf2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VALUES
UNITS
T40HFL T70HFL T85HFL
180° conduction, half sine wave
40
70
85
A
70
°C
63
110
133
A
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 %
VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 %
t = 8.3 ms
VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
475
500
400
420
1130
1030
800
730
11 300
830
870
700
730
3460
3160
2450
2230
34 600
1300
1370
1100
1150
8550
7810
6050
5520
85 500
A
A2s
A2s
TJ = 25 °C, (16.7 % x x IF(AV) < I < x IF(AV))
TJ = 25 °C, (I > x IF(AV))
0.82 0.87 0.84
V
0.84 0.90 0.86
TJ = 25 °C, (16.7 % x x IF(AV) < I < x IF(AV))
TJ = 25 °C, (I > x IF(AV))
7.0
2.77 2.15
m
6.8
2.67 2.07
IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.60
1.73
1.55
V
REVERSE RECOVERY CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITIONS (1)
T40HFL
S02 S05 S10
Maximum reverse
recovery time
trr
Maximum reverse
recovery charge
Qrr
TJ = 25 °C, -dIF/dt = 100 A/μs
IF = 1 A to VR = 30 V
70
110 270
TJ = 25 °C, -dIF/dt = 25 A/μs
IFM = x rated IF(AV), VR = - 30 V
200
500 1000
TJ = 25 °C, -dIF/dt = 100 A/μs
IF = 1 A to VR = 30 V
0.25
0.4
1.35
TJ = 25 °C, -dIF/dt = 25 A/μs
IFM = x rated IF(AV), VR = - 30 V
0.55
2.0
8.0
Note
(1) Tested on LEM 300 A diodemeter tester
T70HFL
S02 S05 S10
70 110 270
200 500 1000
0.25 0.4 1.35
0.6 2.1 8.5
T85HFL
UNITS
S02 S05 S10
80 120 290
ns
200 500 1000
0.3 0.6 1.6
μC
0.8 3.5 1.5
Revision: 20-Dec-16
2
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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