T40HFL_16 Просмотр технического описания (PDF) - Vishay Semiconductors
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T40HFL_16 Datasheet PDF : 16 Pages
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www.vishay.com
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
Vishay Semiconductors
800
At Any Ra ted Loa d Cond ition And With
Rated VRRM App lied Following Surge.
700
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
600
500
400
300
T70HFL.. Series
200
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 15 - Maximum Non-Repetitive Surge Current
850
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
750
Initial T J= 125°C
No Voltage Reapplied
650
Rated V RRM Reapplied
550
450
350
250 T70HFL.. Series
150
0.01
0.1
1
Pulse Train Duration (s)
Fig. 16 - Maximum Non-Repetitive Surge Current
1200
1100
1000
900
At Any Rated Load Condition And With
Rated VRRM Ap p lied Following Surge.
Initial T J= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
800
700
600
500
400 T85HFL.. Series
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 17 - Maximum Non-Repetitive Surge Current
1300
1200
1100
1000
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
900
800
700
600
500
400 T85HFL.. Series
300
0.01
0.1
1
Pulse Train Duration (s)
Fig. 18 - Maximum Non-Repetitive Surge Current
0.51
0.5
0.49
0.48
0.47
I FM= 300A
220A
172A
100A
50A
T40HFL..S02
0.46 T70HFL..S02
TJ = 125 °C
0.45
10
100
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
Fig. 19 - Recovery Time Characteristics
8
I FM= 300A
220A
7
172A
100A
50A
6
5
4
3
T40HFL..S02
2
T70HFL..S02
TJ = 125 °C
1
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Fig. 20 - Recovery Charge Characteristics
Revision: 20-Dec-16
6
Document Number: 93184
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