T40HFL_16 Просмотр технического описания (PDF) - Vishay Semiconductors
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T40HFL_16 Datasheet PDF : 16 Pages
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www.vishay.com
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
Vishay Semiconductors
20
I FM= 300A
18
220A
172A
16
100A
50A
14
12
10
8
T40HFL..S02
T70HFL..S02
6
TJ = 125 °C
4
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Fig. 21 - Recovery Current Characteristics
1.1
1
I FM= 300A
0.9
220A
172A
0.8
100A
50A
0.7 T40HFL..S05
T70HFL..S05
TJ = 125 °C
0.6
10
100
Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
20
18
I FM= 300A
220A
172A
16
100A
50A
14
12
10
8
T40HFL..S05
6
T70HFL..S05
TJ = 125 °C
4
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
Fig. 23 - Recovery Charge Characteristics
28
26 I FM= 300A
220A
24
172A
22
100A
50A
20
18
16
14
12
10
T40HFL..S05
T70HFL..S05
8
TJ = 125 °C
6
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Fig. 24 - Recovery Current Characteristics
1.8
1.7
I FM= 300A
1.6
200A
1.5
100A
1.4
50A
1.3
1.2
T40HFL..S10
1.1 T70HFL..S10
TJ = 125 °C
1
10
100
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
40
35
I FM= 300A
200A
30
100A
25
50A
20
15
T40HFL..S10
10
T70HFL..S10
TJ = 125 °C
5
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Fig. 26 - Recovery Charge Characteristics
Revision: 20-Dec-16
7
Document Number: 93184
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