PHM18NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHM18NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM18NQ15T
TrenchMOS™ standard level FET
4
003aaa244
8
10 V 3.8 V
ID
VGS = 3.6 V
ID
(A)
(A)
3
6
003aaa245
2
4
3.4 V
Tj = 150 °C
1
3.2 V
3.0 V
0
0
0.5
1
1.5
2
VDS (V)
25 °C
2
0
2
3
VGS (V) 4
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
200
RDSon
(mΩ)
150
3.4 V 3.6 V
3.8 V
003aaa709
3
a
2.5
2
03al51
100
1.5
VGS = 5 V
1
50
10 V
0.5
0
0
4
Tj = 25 °C
8
12
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-75
-25
25
75
125
175
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13865
Product data
Rev. 02 — 20 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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