PHM18NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHM18NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
120
Pder
(%)
80
03aa15
PHM18NQ15T
TrenchMOS™ standard level FET
120
Ider
(%)
80
03aa23
40
40
0
0
50
100
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (°C)
VGS ≥ 10 V
Ider = -I-------I--D--------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
102
ID
(A)
10
Limit RDSon = VDS / ID
1
DC
tp = 10 µs
100 µs
1 ms
10 ms
003aaa355
10-1
10-2
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13865
Product data
Rev. 02 — 20 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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