PHM18NQ15T Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

PHM18NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHM18NQ15T

TrenchMOS™ standard level FET

3. Ordering information

Table 2: Ordering information

Type number

Package

Name

Description

PHM18NQ15T

QLPAK

HVSON8: plastic thermal enhanced very thin small outline package;

no leads; 8 terminals; 6 x 5 x 0.85 mm

4. Limiting values

Version

SOT685-1

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

VDGR

VGS

ID

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

IDM

peak drain current

Ptot

total power dissipation

25 °C ≤ Tj ≤ 150 °C

25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ

Tmb = 25 °C; VGS = 10 V; Figure 2 and 3

Tmb = 100 °C; VGS = 10 V; Figure 2

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3

Tmb = 25 °C; Figure 1

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

IS

source (diode forward) current (DC) Tmb = 25 °C

ISM

peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID = 9.9 A;

tp = 0.16 ms; VDD ≤ 150 V; VGS = 10 V;

starting Tj = 25 °C

Min

Max Unit

-

150

V

-

150

V

-

±20

V

-

19

A

-

12

A

-

76

A

-

62.5 W

−55

+150 °C

−55

+150 °C

-

19

A

-

60

A

-

170

mJ

9397 750 13865

Product data

Rev. 02 — 20 August 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

2 of 12

Share Link: