PHM18NQ15T Просмотр технического описания (PDF) - Philips Electronics

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PHM18NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

PHM18NQ15T

TrenchMOS™ standard level FET

Rev. 02 — 20 August 2004

M3D879

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

s SOT96 (SO-8) footprint compatible

s Surface mounted package

s Low thermal resistance

s Low profile.

1.3 Applications

s DC-to-DC converter primary side

switch

s Portable equipment applications.

1.4 Quick reference data

s VDS ≤ 150 V

s Ptot ≤ 62.5 W

s ID ≤ 19 A

s RDSon ≤ 75 mΩ.

2. Pinning information

Table 1: Pinning - SOT685-1 (QLPAK), simplified outline and symbol

Pin

Description

Simplified outline

1,2,3

4

source (s)

gate (g)

1

4

5,6,7,8

mb

drain (d)

mounting base;

connected to drain (d)

mb

8

Bottom view

5

MBL585

SOT685-1 (QLPAK)

[1] Shaded area indicates pin 1 identifier.

Symbol

d

g

mbb076 s

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