PHM18NQ15T Просмотр технического описания (PDF) - Philips Electronics

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PHM18NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHM18NQ15T

TrenchMOS™ standard level FET

8. Revision history

Table 6: Revision history

Rev Date

CPCN

Description

02 20040820 -

Product data (9397 750 13865)

Modifications:

• Section 1.4 “Quick reference data” ID data revised.

• Section 3 “Ordering information” added to data sheet.

• Table 3 “Limiting values” Avalanche ruggedness data added. ID and IDM data revised.

• Figure 3 “Safe operating area; continuous and peak drain currents as a function of

drain-source voltage.” revised.

• Table 5 “Characteristics” Qr data added, Qg(tot), Qgs and Qgd data corrected.

• Figure 7 “Drain-source on-state resistance as a function of drain current; typical values.”

revised.

01 20030130 -

Preliminary data (9397 750 10877)

9397 750 13865

Product data

Rev. 02 — 20 August 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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