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PHM18NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Rth(j-mb) thermal resistance from junction to mounting base Figure 4

5.1 Transient thermal impedance

PHM18NQ15T

TrenchMOS™ standard level FET

Min Typ Max Unit

- - 2 K/W

10

Zth(j-mb)

(K/W)

1 δ = 0.5

0.2

0.1

10-1 0.05

0.02

10-2

single pulse

10-3

10-5

10-4

10-3

10-2

03aj27

P

δ=

tp

T

10-1

tp

t

T

1

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 13865

Product data

Rev. 02 — 20 August 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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