BS616UV2019(2004) Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616UV2019 Datasheet PDF : 9 Pages
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BSI
BS616UV2019
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE ( 48B BGA ignore CE2 condition)
JEDEC
PARAMETER
NAME
tAVAX
tE1LWH
t
AVWL
tAVWH
t
WLWH
tWHAX
tBW
t
WLQZ
tDVWH
tWHDX
tGHQZ
tWHOX
PARAMETER
NAME
tWC
tCW
tAS
tAW
tWP
tWR
t (1)
BW
tWHZ
tDW
tDH
tOHZ
tOW
DESCRIPTION
CYCLE TIME : 100ns
(Vcc = 1.9~3.6V)
MIN. TYP. MAX.
Write Cycle Time
100 --
--
Chip Select to End of Write
(CE,CE2) 100 --
--
Address Setup Time
0
--
--
Address Valid to End of Write
100 --
--
Write Pulse Width
50 --
--
Write recovery Time
(CE,CE2,WE) 0
--
--
Date Byte Control to End of Write
(LB,UB) 40
--
--
Write to Output in High Z
-- -- 40
Data to Write Time Overlap
40 --
--
Data Hold from Write Time
0
--
--
Output Disable to Output in High Z
-- -- 40
End of Write to Output Active
10 --
--
CYCLE TIME : 85ns
(Vcc = 1.9~3.6V)
MIN. TYP. MAX.
85 --
--
85 --
--
0
--
--
85 --
--
40 --
--
0
--
--
35 --
--
--
--
35
35 --
--
0
--
--
--
--
35
10 --
--
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE :
1. tBW is 40ns/35ns (@speed=100ns/85ns) with address toggle. ; tBW is 100ns/85ns (@speed=100ns/85ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
CE2
CE
LB,UB
WE
D OUT
D IN
R0201-BS616UV2019
t AS
(4,10)
t OHZ
(5,12)
(5)
(11)
t CW
(5)
t AW
t BW
t WP
(2)
t DW
(3)
t DH
6
Revision 1.1
Jan. 2004
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