BS616UV2019(2004) Просмотр технического описания (PDF) - Brilliance Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
BS616UV2019 Datasheet PDF : 9 Pages
| |||
BSI
BS616UV2019
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
V TERM
T BIAS
T STG
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
RATING
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
UNITS
V
OC
OC
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
1.8V ~ 3.6V
1.9V ~ 3.6V
PT
I OUT
Power Dissipation
DC Output Current
1.0
W
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX. UNIT
6 pF
8 pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
VIL
VIH
IIL
ILO
VOL
VOH
ICC
ICCSB
(5)
ICCSB1
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
Voltage(2)
Vcc=2.0V
Vcc=3.0V
Guaranteed Input High
Voltage(2)
Vcc=2.0V
Vcc=3.0V
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE = VIH , or CE2(4) = VIL,
or OE = VIH, VI/O = 0V to VCC
IOL = 0.1mA ; Vcc=Max
Vcc=2.0V
IOL = 2.0mA ; Vcc=Max
Vcc=3.0V
IOH = -0.1mA ; Vcc=Min
IOH = -1.0mA ; Vcc=Min
Vcc=2.0V
Vcc=3.0V
Operating Power Supply
Current
Standby Current TTL
Standby Current CMOS
CE = VIL
CE2 = VI(H4)
,IDQ
=
0mA,
F = Fmax(3)
CE = VIH
or CE2 =
VIL(4)
, IDQ = 0mA
CE ≧Vcc-0.2V,or CE2 ≦ 0.2V,(4)
VIN ≧Vcc - 0.2V or VIN ≦ 0.2V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
MIN. TYP. (1) MAX.
(6)
-0.3
--
1.4
--
2.0
--
--
0.6
0.8
Vcc+0.3
1
--
--
1
0.2
--
--
0.4
Vcc-0.2
--
--
2.4
--
--
10
--
--
13
--
--
0.1
--
--
0.5
--
0.20
3.0
--
0.30
5.0
UNITS
V
V
uA
uA
V
V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC.
4. 48B BGA ignore CE2 condition.
5.IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC.
6. VIL = -1.5V for pulse width less than 30ns
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3)
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.0
--
--
V
ICCDR (4)
Data Retention Current
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3)
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.0V, TA = + 25OC
3. 48B BGA ignore CE2 condition.
2. tRC = Read Cycle Time
4. IccDR is 0.7uA at TA=70oC.
R0201-BS616UV2019
3
Revision 1.1
Jan. 2004
Share Link: 