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BS616UV2019(2004) Просмотр технического описания (PDF) - Brilliance Semiconductor

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BS616UV2019
(Rev.:2004)
BSI
Brilliance Semiconductor BSI
BS616UV2019 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BSI
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
ADDRESS
D OUT
t OH
t AA
READ CYCLE2 (1,3,4)
CE2
CE
D OUT
tACS2(6)
t ACS1
(5,6)
t CLZ
READ CYCLE3 (1,4)
ADDRESS
OE
CE2
CE
LB,UB
t RC
t AA
t OE
t ACS2(6)
t OLZ
t ACS1
(5,6)
t CLZ
t BE
t BA
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
6. 48B BGA ignore this parameters related to CE2 .
R0201-BS616UV2019
5
BS616UV2019
t OH
t (5,6)
CHZ
t OH
t (5)
OHZ
t (1,5,6)
CHZ
t BDO
Revision 1.1
Jan. 2004

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