STP11NM50N(2015) Даташит - STMicroelectronics
Номер в каталоге
STP11NM50N
Other PDF
PDF
page
13 Pages
File Size
437.8 kB
производитель
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package ( Rev : 2014 )
STMicroelectronics
N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages ( Rev : 2022 )
STMicroelectronics
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220 package
STMicroelectronics
N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFET in IPAK package
STMicroelectronics
N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
( Rev : 2022 )
STMicroelectronics
N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
Share Link: