STP11NM50N(2015) Просмотр технического описания (PDF) - STMicroelectronics

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STP11NM50N
(Rev.:2015)

N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET in a TO-220 package

STMicroelectronics 

STP11NM50N

N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET

in a TO-220 package

Datasheet - obsolete product

Features

Order code VDS @ TJ max RDS(on) max ID

7$%

STP11NM50N

550 V

0.47 Ω 8.5 A

roduct(s) 72

 

lete P Figure 1. Internal schematic diagram

Obso '7$%

duct(s) - *

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Pro6

olete 6&

Obs Table 1. Device summary

Order code

Marking

Package

Packaging

STP11NM50N

11NM50N

TO-220

Tube

November 2015

This is information on a discontinued product.

DocID17156 Rev 4

1/13

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