STP11NM50N(2015) Просмотр технического описания (PDF) - STMicroelectronics

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STP11NM50N
(Rev.:2015)

N-channel 500 V, 0.40 Ω typ., 8.5 A MDmesh™ II Power MOSFET in a TO-220 package

STMicroelectronics 

Test circuits

3

Test circuits

STP11NM50N

Figure 13. Test circuit for resistive load

switching times

Figure 14. Test circuit for gate charge behavior

9''

9

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Q)

VD

VGS

RG

duct(s) PW

RL

2200

μF

D.U.T.

3.3

μF VDD

AM01468v1

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Pro Figure 15. Test circuit for inductive load

te switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Obsole G

) - 25Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

t(s G

uc RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

Prod AM01470v1

lete Figure 17. Unclamped inductive waveform

Pw

AM01471v1

Figure 18. Switching time waveform

bso 9%5'66

O 9'

WRQ

WGRQ

WU

WRII

WGRII

WI





9''

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9''



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8/13

DocID17156 Rev 4

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